Unintentional annealing of the active layer in the growth...

phys stat sol (a) 2013 / 08 Vol. 210; Iss. 8

Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures

Mickevičius, J., Dobrovolskas, D., Šimonytė, I., Tamulaitis, G., Chen, C.-Y., Liao, C.-H., Chen, H.-S., Yang, C. C.
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Volume:
210
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201228824
Date:
August, 2013
File:
PDF, 402 KB
english, 2013
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