![](/img/cover-not-exists.png)
Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si 0.7 Ge 0.3 (001) as a function of annealing temperature
Kim, Dae-Kyoung, Kang, Yu Seon, Kang, Hang Kyu, Cho, Mann-Ho, Ko, Dae Hong, Lee, Sun Young, Kim, Dong Chan, Kim, Chang Soo, Seo, Jung HyeVolume:
210
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201329113
Date:
November, 2013
File:
PDF, 482 KB
english, 2013