Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes
Kang, He, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Yin, Haibo, Qu, Shenqi, Peng, Enchao, Gong, Jiamin, Wang, Xiaoliang, Li, Baiquan, Wang, Zhanguo, Hou, XunVolume:
212
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201431719
Date:
May, 2015
File:
PDF, 368 KB
english, 2015