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Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and reflectance
Bag, Ankush, Das, Subhashis, Biswas, DhrubesVolume:
13
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201510202
Date:
May, 2016
File:
PDF, 819 KB
english, 2016