Enhanced Electrical Activation in In-Implanted Si...

Materials Research Letters 2016 / 04

Enhanced Electrical Activation in In-Implanted Si 0.35 Ge 0.65 by C Co-Doping

Feng, Ruixing, Kremer, Felipe, Sprouster, David J., Mirzaei, Sahar, Decoster, Stefan, Glover, Chris J., Medling, Scott A., Hansen, John Lundsgaard, Nylandsted-Larsen, Arne, Russo, Salvy P., Ridgway, M
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Language:
english
Journal:
Materials Research Letters
DOI:
10.1080/21663831.2016.1169229
Date:
April, 2016
File:
PDF, 1.65 MB
english, 2016
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