Threshold field for soft damage and electron drift velocity...

Semiconductor Science and Technology 2015 / 10 Vol. 30; Iss. 10

Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

Ardaravičius, L, Kiprijanovič, O, Liberis, J, Šermukšnis, E, Matulionis, A, Ferreyra, R A, Avrutin, V, Özgür, Ü, Morkoç, H
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/10/105016
Date:
October, 2015
File:
PDF, 640 KB
english, 2015
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