Formation of SiC in DLC/a-Si films as characterized by...

Journal of Physics Conference Series 2013 / 03 Vol. 417

Formation of SiC in DLC/a-Si films as characterized by Raman spectroscopy and XPS

Srisang, C, Asanithi, P, Siangchaew, K, Pokaipisit, A, Limsuwan, P
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Volume:
417
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/417/1/012046
Date:
March, 2013
File:
PDF, 1.90 MB
english, 2013
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