Physical and bonding characteristics of N-doped...

Physical and bonding characteristics of N-doped hydrogenated amorphous silicon carbide films grown by PECVD and annealed by pulsed electron beam

Huran, J, Hotovy, I, Balalykin, N I, Starikov, A M
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Volume:
61
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/61/1/086
Date:
March, 2007
File:
PDF, 108 KB
english, 2007
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