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SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, California, United States (Saturday 22 January 2005)] Physics and Simulation of Optoelectronic Devices XIII - Polarization field effects on optical gain and lasing characteristics of III-V nitride and arsenide quantum wells
Deligeorgis, George, Osinski, Marek, Henneberger, Fritz, Dialynas, Giorgos, Hatzopoulos, Zacharias, Amano, Hiroshi, Pelekanos, NikolaosVolume:
5722
Year:
2005
Language:
english
DOI:
10.1117/12.590621
File:
PDF, 459 KB
english, 2005