![](/img/cover-not-exists.png)
Focused ion beam implantation of Ga in Si and Ge: fluence-dependent retention and surface morphology
Hubert Gnaser, Alexander Brodyanski, Bernhard ReuscherVolume:
40
Year:
2008
Language:
english
Pages:
8
DOI:
10.1002/sia.2915
File:
PDF, 373 KB
english, 2008