Focused ion beam implantation of Ga in Si and Ge:...

Focused ion beam implantation of Ga in Si and Ge: fluence-dependent retention and surface morphology

Hubert Gnaser, Alexander Brodyanski, Bernhard Reuscher
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Volume:
40
Year:
2008
Language:
english
Pages:
8
DOI:
10.1002/sia.2915
File:
PDF, 373 KB
english, 2008
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