Redistribution of boron during thermal oxidation of silicon studied by SIMS using Ar+ bombardment and the MISR method. Part I: Methodology
F. Michiels, L. Butaye, F. AdamsVolume:
14
Year:
1989
Language:
english
Pages:
8
DOI:
10.1002/sia.740140403
File:
PDF, 757 KB
english, 1989