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ChemInform Abstract: Molecular Beam Epitaxy Growth of Ge on (100) Si.
BARIBEAU, J.-M., HOUGHTON, D. C., JACKMAN, T. E., MCCAFFREY, J. P.Volume:
20
Journal:
ChemInform
DOI:
10.1002/chin.198933013
Date:
August, 1989
File:
PDF, 151 KB
1989