A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl 3 and NH 3
Serrano Perez, Edgar, Nuñez Velazquez, Miguel A., Juárez Lopez, FernandoVolume:
12
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201400165
Date:
April, 2015
File:
PDF, 508 KB
english, 2015