An advanced tunnel oxide layer process for 65 nm NOR...

Semiconductor Science and Technology 2015 / 10 Vol. 30; Iss. 10

An advanced tunnel oxide layer process for 65 nm NOR floating-gate flash memories

Chiu, Shengfen, Xu, Yue, Ji, Xiaoli, Liao, Yiming, Wu, Fuwei, Yan, Feng
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/10/105032
Date:
October, 2015
File:
PDF, 1.10 MB
english, 2015
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