[IEEE 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - Glasgow, United Kingdom (2015.6.29-2015.7.2)] 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

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