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SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV - Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes
Ee, Yik-Khoon, Streubel, Klaus P., Jeon, Heonsu, Li, Xiao-Hang, Biser, Jeff, Tu, Li-Wei, Linder, Norbert, Cao, Wanjun, Chan, Helen M., Vinci, Richard P., Tansu, NelsonVolume:
7617
Year:
2010
Language:
english
DOI:
10.1117/12.841503
File:
PDF, 9.33 MB
english, 2010