A Gate-Current Model for Advanced MOSFET Technologies...

A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2

Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue
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Volume:
3
Year:
2008
Language:
english
Pages:
8
DOI:
10.1002/tee.20235
File:
PDF, 261 KB
english, 2008
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