Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown Current: A High ESD Mechanism Analysis
Kenichi Hatasako, Fumitoshi Yamamoto, Akio Uenishi, Takashi Kuroi, Shigeto MaegawaVolume:
4
Year:
2009
Language:
english
Pages:
5
DOI:
10.1002/tee.20470
File:
PDF, 350 KB
english, 2009