Mesostructured Hf x Al y O 2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors
Lee, Yunseong, Jeon, Woojin, Cho, Yeonchoo, Lee, Min-Hyun, Jeong, Seong-Jun, Park, Jongsun, Park, SeongjunLanguage:
english
Journal:
ACS Nano
DOI:
10.1021/acsnano.6b01734
Date:
July, 2016
File:
PDF, 4.22 MB
english, 2016