[IEEE 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2016.4.25-2016.4.27)] 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - An Innovative 1T1R Dipole Dynamic Random Access Memory (DiRAM) featuring high speed, ultra-low power, and low voltage operation

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