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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric
Nguyen, Tuan Quy, Shih, Hong-An, Kudo, Masahiro, Suzuki, Toshi-kazuVolume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300290
Date:
November, 2013
File:
PDF, 486 KB
english, 2013