SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis
Paskova, T., Morkoç, Hadis, Litton, Cole W., Hanser, A., Preble, E., Chyi, Jen-Inn, Nanishi, Yasushi, Evans, K., Kröger, R., Yoon, Euijoon, Tuomisto, F., Kersting, R., Alcorn, R., Ashley, S., Pagel, CVolume:
6894
Year:
2008
Language:
english
DOI:
10.1117/12.767628
File:
PDF, 938 KB
english, 2008