A uniform doping ultra-thin SOI LDMOS with...

Chinese Physics B 2016 / 02 Vol. 25; Iss. 2

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

Zhang, Yan-Hui, Wei, Jie, Yin, Chao, Tan, Qiao, Liu, Jian-Ping, Li, Peng-Cheng, Luo, Xiao-Rong
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Volume:
25
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/25/2/027306
Date:
February, 2016
File:
PDF, 857 KB
english, 2016
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