Analysis of partially oxidised epitaxial silicon...

Analysis of partially oxidised epitaxial silicon mono-layers on germanium virtual substrates using aberration corrected scanning transmission electron microscopy

Ross, I M, Norris, D J, Jaeger, B De, Lee, W, Meuris, M, Walther, T
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Volume:
326
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/326/1/012050
Date:
November, 2011
File:
PDF, 1.86 MB
english, 2011
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