[IRE 1974 International Electron Devices Meeting (IEDM) - Washigton, DC, USA (1974.12.9-1974.12.11)] 1974 International Electron Devices Meeting (IEDM) - A model for the accurate prediction of the current voltage behavior of ion-implanted MOS transistors at low drain voltages
Evans, Stephen A., Morgan, Ian H., Jernigan, Ted N.Year:
1974
Language:
english
DOI:
10.1109/iedm.1974.6219608
File:
PDF, 565 KB
english, 1974