Monitoring Test Structure for Plasma Process-Induced...

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IEEE Transactions on Semiconductor Manufacturing 2016

Monitoring Test Structure for Plasma Process-Induced Charging Damage using Charge-Based Capacitance Measurements

Mori, Shigetaka, Ogawa, Kazuhisa, Oishi, Hidetoshi, Suzuki, Tsuyoshi, Tomita, Manabu, Bairo, Masaaki, Fukuzaki, Yuzo, Ohnuma, Hidetoshi
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/tsm.2016.2567599
File:
PDF, 1.44 MB
english, 2016
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