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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 21 January 2012)] Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - Characteristics of bulk InGaAsN and InGaAsSbN material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application
Kim, TaeWan, Garrod, Toby J., Kim, Kangho, Lee, Jaejin, Mawst, Luke J., Kuech, T. F., LaLumondiere, S. D., Sin, Y., Lotshaw, W. T., Moss, S. C., Freundlich, Alexandre, Guillemoles, Jean-Francois F.Volume:
8256
Year:
2012
Language:
english
DOI:
10.1117/12.906961
File:
PDF, 458 KB
english, 2012