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ChemInform Abstract: Highly Selective Etching of Si3N4 to SiO2 Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge
SUTO, S., HAYASAKA, N., OKANO, H., HORIIKE, Y.Volume:
20
Journal:
ChemInform
DOI:
10.1002/chin.198946333
Date:
November, 1989
File:
PDF, 134 KB
1989