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Excellent R off / R on ratio and short programming time in Cu/Al 2 O 3 -based conductive-bridging RAM under low-current (10 μA) operation
Belmonte, Attilio, Fantini, Andrea, Redolfi, Augusto, Houssa, Michel, Jurczak, Malgorzata, Goux, LudovicVolume:
213
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201532409
Date:
February, 2016
File:
PDF, 491 KB
english, 2016