Analysis of p-type SiO x...

physica status solidi (a) 2016 / 03

Analysis of p-type SiO x layers as a boron diffusion source for n-type c-Si substrates

Goyal, Prabal, Urrejola, Elias, Hong, Junegie, Voillot, Julien, i Cabarrocas, Pere Roca, Johnson, Erik
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201532912
Date:
March, 2016
File:
PDF, 676 KB
english, 2016
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