Alternately double-sided growth of low-curvature GaN...

physica status solidi (b) 2016 / 05 Vol. 253; Iss. 5

Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Okada, Narihito, Ihara, Hiroshi, Yamane, Keisuke, Tadatomo, Kazuyuki
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Volume:
253
Language:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201552783
Date:
May, 2016
File:
PDF, 911 KB
english, 2016
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