Linearly graded doping drift region: a novel lateral...

Semiconductor Science and Technology 2010 / 11 Vol. 25; Iss. 11

Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performancess

He, Jin, Xi, Xuemei, Chan, Mansun, Hu, Chenming, Li, Yingxue, Xing, Zhang, Huang, Ru
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Volume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/11/119801
Date:
November, 2010
File:
PDF, 36 KB
english, 2010
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