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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Band-structure dependence of impact ionization: bulk semiconductors, strained Ge/Si alloys, and multiple-quantum-well avalanche photodetectors
Czajkowski, Igor K., Allam, Jeremy, Adams, Alfred R., Razeghi, ManijehVolume:
1362
Year:
1991
Language:
english
DOI:
10.1117/12.24541
File:
PDF, 473 KB
english, 1991