Trapping behavior of GaN HEMTs and its implications on...

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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2015

Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection

Cabral, Pedro M., Nunes, Luis C., Ressurreição, Tiago, Pedro, José C.
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Year:
2015
Language:
english
Journal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOI:
10.1002/jnm.2128
File:
PDF, 1.30 MB
english, 2015
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