Reduced porosity in metal-assisted chemical etching of...

Reduced porosity in metal-assisted chemical etching of vertical Si nanowire arrays by an induced magnetic field

Yun, Seokhun, Choi, Chan Ho, Patil, Dipali S., Kim, Doo Gun, Lee, Taikjin, Song, Gwang Yeom, Heo, Jaeyeong, Shin, Jae Cheol
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Volume:
213
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201532831
Date:
June, 2016
File:
PDF, 612 KB
english, 2016
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