Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors
Zhang, Weihang, Li, Xiangdong, Zhang, Jincheng, Jiang, Haiqing, Xu, Xin, Guo, Zhenxing, Jiang, Renyuan, Zou, Yu, He, Yunlong, Hao, YueLanguage:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201532894
Date:
March, 2016
File:
PDF, 1.76 MB
english, 2016