The effect of bottom LaB 6...

The effect of bottom LaB 6 electrode and La 2 O 3 interlayer on resistance switching in devices based on Li-doped ZnO films

Kafadaryan, Y., Igityan, A., Aghamalyan, N., Petrosyan, S.
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Volume:
213
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201533004
Date:
June, 2016
File:
PDF, 769 KB
english, 2016
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