Half-Heusler compounds with a 1 eV (1.7 eV) direct band...

physica status solidi (b) 2016 / 05 Vol. 253; Iss. 5

Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study

Belmiloud, N., Boutaiba, F., Belabbes, A., Ferhat, M., Bechstedt, F.
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Volume:
253
Language:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201552674
Date:
May, 2016
File:
PDF, 530 KB
english, 2016
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