Admittance of MIS structures based on graded-gap MBE HgCdTe...

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Physica status solidi 2016 / 04

Admittance of MIS structures based on graded-gap MBE HgCdTe with Al 2 O 3 insulator

Voitsekhovskii, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Vasil`ev, Vladimir V., Varavin, Vasiliy S., Dvoretsky, Sergey A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy
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Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201510227
Date:
April, 2016
File:
PDF, 434 KB
english, 2016
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