Quantitative ToF-SIMS depth profiling of a multi-phased...

Surface and Interface Analysis 2016 / 07 Vol. 48; Iss. 7

Quantitative ToF-SIMS depth profiling of a multi-phased III-V semiconductor matrix via the analysis of secondary cluster ions

Gong, Bin, Marjo, Christopher E.
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Volume:
48
Language:
english
Journal:
Surface and Interface Analysis
DOI:
10.1002/sia.5928
Date:
July, 2016
File:
PDF, 1.99 MB
english, 2016
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