High- k gate dielectric GaAs...

Chinese Physics B 2015 / 12 Vol. 24; Iss. 12

High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3 -plasma surface pretreatment

Liu, Chao-Wen, Xu, Jing-Ping, Liu, Lu, Lu, Han-Han
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/12/127304
Date:
December, 2015
File:
PDF, 344 KB
english, 2015
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