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[IEEE 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Saratoga Springs, NY, USA (2016.5.16-2016.5.19)] 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Transient leakage of point-defects in gate oxide due to spatially transported constant-source of phosphorus contaminants
Sheng, Lieyi, Williams, Brett, Haskett, Thomas, Glines, EddieYear:
2016
Language:
english
DOI:
10.1109/asmc.2016.7491164
File:
PDF, 579 KB
english, 2016