Intrinsic robustness of TFET Subthreshold Swing to...

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IEEE Electron Device Letters 2016

Intrinsic robustness of TFET Subthreshold Swing to Interface and Oxide Traps: a comparative PBTI study of InGaAs TFETs and MOSFETs

Franco, Jacopo, Alian, Alireza, Vandooren, Anne, Verhulst, Anne, Linten, Dimitri, Collaert, Nadine, Thean, Aaron
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2016.2584983
File:
PDF, 516 KB
english, 2016
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