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SPIE Proceedings [SPIE Semiconductors '92 - Somerset, NJ (Sunday 22 March 1992)] Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors - Effect of Al mole fraction on decay profile of photoinduced IR absorption and the determination of the critical value of xc for AlxGa1-xAs
Wang, Wubao B., Alfano, Robert R., Szmyd, David M., Nozik, Arthur J., Alfano, Robert R.Volume:
1677
Year:
1992
Language:
english
DOI:
10.1117/12.137671
File:
PDF, 356 KB
english, 1992