SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - High-performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition
Sun, Tai Ping, Lee, Si-Chen, Liu, Kou-Chen, Pang, Yen-Ming, Yang, Sheng-Jehn, Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24333
File:
PDF, 200 KB
english, 1991