SiC Trench Devices with Ultra Low Ron

ECS Transactions 2013 / 03 Vol. 50; Iss. 3

SiC Trench Devices with Ultra Low Ron

Nakamura, T., Aketa, M., Nakano, Y., Otake, H., Otsuka, T., Hanada, T.
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Volume:
50
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/05003.0039ecst
Date:
March, 2013
File:
PDF, 303 KB
english, 2013
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