High-relative-dielectric-constant bismuth–niobium–oxide films prepared using Nb-rich precursor solution
Ariga, Tomoki, Inoue, Satoshi, Matsumoto, Shin, Onoue, Masatoshi, Miyasako, Takaaki, Tokumitsu, Eisuke, Shimoda, TatsuyaVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.091501
Date:
September, 2015
File:
PDF, 2.56 MB
english, 2015