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Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window
Qian, Kai, Nguyen, Viet Cuong, Chen, Tupei, Lee, Pooi SeeVolume:
2
Language:
english
Journal:
Advanced Electronic Materials
DOI:
10.1002/aelm.201500370
Date:
April, 2016
File:
PDF, 3.84 MB
english, 2016