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Effects of surface morphology and C concentration in C-doped GaN buffer on breakdown voltage of AlGaN/GaN HEMTs on free-standing GaN substrate
Tanabe, Shinichi, Watanabe, Noriyuki, Uchida, Masahiro, Matsuzaki, HideakiVolume:
213
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201532781
Date:
May, 2016
File:
PDF, 609 KB
english, 2016