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High-performance AlGaN/AlN/GaN high electron mobility transistor with broad gate-to-source operation voltages
Tsai, Jung-Hui, Chiang, Chung-Cheng, Wang, Fu-MinVolume:
12
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201400241
Date:
June, 2015
File:
PDF, 330 KB
english, 2015